Ballistic and thermalized regimes to tune structure and conducting properties of W–Mo thin films

W–Mo thin films are prepared by magnetron co-sputtering using glancing angle deposition. The same deposition ?W = ?Mo 80° is used for both W and Mo targets. Two different sputtering pressures used: 0.33 Pa 1.5 Pa, which correspond to ballistic thermalized regimes of sputtered atoms, respectively. For each regime, target current kept at IW 140 mA, whereas gradually changes from IMo 10–200 mA. Both present porous with inclined columns due the shadowing effect that characterizes high oblique angle. Surface cross-section morphologies exhibit elliptically bounded regime while they change a cauliflower-like structure as thermalization prevails. At low pressure, column ? decreases Mo-enrichment noticed. Films poorly crystallized pressure whatever resistive behavior. electrical resistivity vs. content follows rule mixtures these deposited correlate corrected Nordheim's law.